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Proceedings Paper

Optical Cavity Design For Wavelength-Resonant Surface-Emitting Semiconductor Lasers
Author(s): S. R.J. Brueck; M. Y.A. Raja; M. Osinski; C. F. Schaus; M. Mahbobzadeh; J. G. McInerney; K. J. Dahlhauser
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Paper Abstract

Recently, we have demonstrated a novel surface-emitting semiconductor laser with a wavelength-resonant periodic gain medium, which has performed significantly better than conventional double-heterostructure and multiple-quantum-well vertical-cavity devices. The gain medium consists of a series of half-wave-spaced quantum wells which provides enhanced longitudinal gain at a selected wavelength in the vertical direction, reducing transverse amplified spontaneous emission, lowering the threshold and raising the quantum efficiency. However, because the antinodes of the standing-wave optical field must coincide with the quantum wells, considerable attention must be devoted to designing the vertical cavity. Here we examine various cavity configurations in which the wavelength-resonant periodic gain medium has been incorporated. Multilayer epitaxial reflectors are particularly attractive for fabricating monolithic vertical-cavity surface-emitting lasers.

Paper Details

Date Published: 22 June 1989
PDF: 12 pages
Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); doi: 10.1117/12.976362
Show Author Affiliations
S. R.J. Brueck, University of New Mexico (United States)
M. Y.A. Raja, University of New Mexico (United States)
M. Osinski, University of New Mexico (United States)
C. F. Schaus, University of New Mexico (United States)
M. Mahbobzadeh, University of New Mexico (United States)
J. G. McInerney, University of New Mexico (United States)
K. J. Dahlhauser, University of New Mexico (United States)


Published in SPIE Proceedings Vol. 1043:
Laser Diode Technology and Applications
Luis Figueroa, Editor(s)

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