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Proceedings Paper

Extremely Low Threshold Ingaasp DFB Laser Diode By The MOCVD/LPE
Author(s): S. Kakimoto; K. Ikeda; H. Namizaki; W. Susaki; K. Shibayama
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Paper Abstract

An extremely low threshold InGaAsP DFB laser diode has been developed by the MOCVD and LPE hybrid process. The threshold current of 3.1mA is the lowest value among InGaAsP laser diodes so far reported including those of the conventional Fabry Perot type. Using this low threshold DFB laser, 1 Gbit/s RZ zero bias modulation has been demonstrated.

Paper Details

Date Published: 22 June 1989
PDF: 7 pages
Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); doi: 10.1117/12.976348
Show Author Affiliations
S. Kakimoto, Mitsubishi Electric Corporation (Japan)
K. Ikeda, Mitsubishi Electric Corporation (Japan)
H. Namizaki, Mitsubishi Electric Corporation (Japan)
W. Susaki, Mitsubishi Electric Corporation (Japan)
K. Shibayama, Mitsubishi Electric Corporation (Japan)

Published in SPIE Proceedings Vol. 1043:
Laser Diode Technology and Applications
Luis Figueroa, Editor(s)

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