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Proceedings Paper

Ion Beam Assisted Deposition Of Optical Thin Films - Recent Results
Author(s): J. J. McNally; G. A. Al-Jumaily; S. R. Wilson; J. R. McNeil
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Paper Abstract

We have examined the properties of dielectric (Ti02, Si02, -Al203, Ta205 and Hf02) films deposited using ion-assisted deposition (IAD). The films were characterized using an angularly resolved scatterometer, spectrophotometer and Raman spectroscopy. A reduction in optical scatter, especially that due to low spatial frequencies, is observed for films deposited with simultaneous ion bombardment. Higher values of refractive index are obtained for films deposited using IAD. Raman spectra indicate a crystalline phase change in TiO2 films is induced by bombardment of samples with 02 ions during deposition. Other experimental data and the effects of the induced phase transition on the optical properties of TiO2 will be discussed.

Paper Details

Date Published: 20 November 1985
PDF: 7 pages
Proc. SPIE 0540, Southwest Conf on Optics '85, (20 November 1985); doi: 10.1117/12.976155
Show Author Affiliations
J. J. McNally, University of New Mexico (United States)
G. A. Al-Jumaily, University of New Mexico (United States)
S. R. Wilson, University of New Mexico (United States)
J. R. McNeil, University of New Mexico (United States)


Published in SPIE Proceedings Vol. 0540:
Southwest Conf on Optics '85
Susanne C. Stotlar, Editor(s)

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