Share Email Print

Proceedings Paper

Intervalence-Band Absorption Saturation And Optically Induced Damage Of GaAs By Pulsed CO2 Laser Radiation
Author(s): R. B. James; W. H. Christie; R. E. Eby; L. S. Darken Jr.; B. E. Mills
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The absorption of CO2, laser radiation in p-type GaAs is dominated by direct free-hole transitions between states in the heavy- and light-hole bands. For laser intensities on the order of 10 MW/cm2, the absorption associated with these transitions in moderately Zn-doped GaAs begins to saturate in a manner predicted by an inhomogeneously broadened two-level model. For heavily Zn-doped samples (>1018 cm -3), large areas of the surface are found to melt at comparable laser energy densities, in contrast to the lightly doped samples in which the damage initially occurs in small localized sites. As the energy density of the CO2 laser radiation is progressively increased, the surface topography of the samples shows signs of ripple patterns, high local stress, vaporization of material, and exfoliation of solid GaAs fragments. X-ray emission data taken on the laser-melted samples show that there is a loss of As, compared to Ga, from the surface during the high temperature cycling. Secondary ion mass spectrometry (SIMS) measurements are used to study the diffusion of oxygen from the native oxide and the incorporation of trapped oxygen in the near-surface region of the GaAs samples that have been melted by a CO2 laser pulse. We find that oxygen trapping does occur, and that the amount and depth of the oxygen signal depends on the laser energy density and number of laser shots.

Paper Details

Date Published: 20 November 1985
PDF: 10 pages
Proc. SPIE 0540, Southwest Conf on Optics '85, (20 November 1985); doi: 10.1117/12.976149
Show Author Affiliations
R. B. James, Sandia National Laboratories (United States)
W. H. Christie, Oak Ridge National Laboratory (United States)
R. E. Eby, Oak Ridge National Laboratory (United States)
L. S. Darken Jr., Tennelec Corporation (United States)
B. E. Mills, Sandia National Laboratories (United States)

Published in SPIE Proceedings Vol. 0540:
Southwest Conf on Optics '85
Susanne C. Stotlar, Editor(s)

© SPIE. Terms of Use
Back to Top