Share Email Print

Proceedings Paper

Gallium Arsenide Photocathode For The Free Electron Laser
Author(s): S. C. Stotlar; R. W. Springer; B. Sherwood; R. Cordi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The efforts of the FEL source have been concentrated on cesiated GaAs(100) wafers. These crystals have shown photoyield of <.1 - 9 percent quantum efficiency with the cesium and oxygen treatment. The work function and coverage curves exhibit the same properties as measured in the literature. The use of Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy have been instrumental in determining the surface cleanliness and the surface oxidation states. The sputtered surfaces have been investigated as a function of rare gas mass and sputter ion voltage, giving similar results to earlier literature values. Temperature annealing appears to be critical after sputter cleaning in achieving any significant photoyield. Contacts of Ag-Mn and Ni-Si have been deposited, heated, and analyzed using Auger Depth Profiling techniques.

Paper Details

Date Published: 20 November 1985
PDF: 10 pages
Proc. SPIE 0540, Southwest Conf on Optics '85, (20 November 1985); doi: 10.1117/12.976122
Show Author Affiliations
S. C. Stotlar, Los Alamos National Laboratory (United States)
R. W. Springer, Los Alamos National Laboratory (United States)
B. Sherwood, Los Alamos National Laboratory (United States)
R. Cordi, Los Alamos National Laboratory (United States)

Published in SPIE Proceedings Vol. 0540:
Southwest Conf on Optics '85
Susanne C. Stotlar, Editor(s)

© SPIE. Terms of Use
Back to Top