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Proceedings Paper

Quasi-Analytical Description Of Sideband Formation In A Free-Electron Laser (FEL)
Author(s): C. James Elliott
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Paper Abstract

A simple method of looking at sideband development in a free-electron laser has been developed. It reduces a two-dimensional (z,t) mathematical formulation to a one-dimensional (t) formulation. A graphical interpretation gives us the intensity increment on the leading edge of a square optical pulse in the two-dimensional problem in terms of the average energy loss curve for the electrons in a one-dimensional problem.

Paper Details

Date Published: 20 November 1985
PDF: 7 pages
Proc. SPIE 0540, Southwest Conf on Optics '85, (20 November 1985); doi: 10.1117/12.976120
Show Author Affiliations
C. James Elliott, Los Alamos National Laboratory (United States)


Published in SPIE Proceedings Vol. 0540:
Southwest Conf on Optics '85
Susanne C. Stotlar, Editor(s)

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