Share Email Print
cover

Proceedings Paper

Summary Of Recent Studies On AlGaAs/GaAs Radiation Hardened Photodiodes
Author(s): J. J. Wiczer
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this paper, we summarize the results of several studies assessing the radiation hardness of a new type of double heterojunction, A1GaAs/GaAs photodiode. These studies include transient and permanent damage experiments. Transient studies indicate that double heterostructure AlGaAs/GaAs photodiodes generate 40 times less photocurrent than conventional silicon photodiodes,Auring exposure to ionizing-radiation pulses. Permanent damage studies with neutrons, Coy' gamma rays, and high energy electron beam sources indicate only minor changes in operational characteristics after exposures. These studies have shown a 20% degradation in optical response and a factor of 8 increase in photodiode leakage current after exposure to 3.6 x 101-5 neutron/cm2 fluence. Conventional silicon photodiodes exhibit this type of degradation after exposures to 1012 - 1013 neutrons/cm2 fluences. These characteristics are important for many specialized applications requiring radiation hardness.

Paper Details

Date Published: 20 November 1985
PDF: 3 pages
Proc. SPIE 0540, Southwest Conf on Optics '85, (20 November 1985); doi: 10.1117/12.976109
Show Author Affiliations
J. J. Wiczer, Sandia National Laboratories (United States)


Published in SPIE Proceedings Vol. 0540:
Southwest Conf on Optics '85
Susanne C. Stotlar, Editor(s)

© SPIE. Terms of Use
Back to Top