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Proceedings Paper

Shedding light on EUV mask inspection
Author(s): Kazunori Seki; Karen Badger; Emily Gallagher; Toshio Konishi; Gregory McIntyre
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Paper Abstract

EUV defect detectability is evaluated both through simulation and by conventional mask inspection tools at various wavelengths (13.5, 193, 257, 365, 488 and 532 nm). The simulations reveal that longer wavelength light penetrates deeper into the multilayer than shorter wavelength light, however this additional penetration does not necessarily provide an advantage over shorter wavelengths for detecting defects. Interestingly, for both blank and patterned mask inspections, each wavelength detected unique defects not seen at other wavelengths. In addition, it was confirmed that some of the defects that are detected only by longer wavelengths are printable. This study suggests that a combination of wavelengths may be the most comprehensive approach to finding printable defects as long as actinic inspection is not available.

Paper Details

Date Published: 30 June 2012
PDF: 12 pages
Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844114 (30 June 2012); doi: 10.1117/12.976059
Show Author Affiliations
Kazunori Seki, Toppan Photomasks, Inc. (United States)
Karen Badger, IBM Microelectronics (United States)
Emily Gallagher, IBM Microelectronics (United States)
Toshio Konishi, Toppan Photomasks, Inc. (United States)
Gregory McIntyre, IBM Microelectronics (United States)


Published in SPIE Proceedings Vol. 8441:
Photomask and Next-Generation Lithography Mask Technology XIX
Kokoro Kato, Editor(s)

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