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Proceedings Paper

Research on ICP etching technology of InGaAs based on orthogonal experimental design
Author(s): Bo Yang; Yaoming Zhu; Honghai Deng; Peng Wei; Hengjing Tang; Tao Li; Xue Li; Haimei Gong
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Paper Abstract

A chemistry of halogen mixed with neural or inert gas is mostly used for ICP etching of III-V compound semiconductor. The neural or inert gas has an effect of desorption and dilution, on the other hand, damages in the lattice due to ion bombardment are induced, which result in difficulties in improving the performances of detectors. Good desorption and passivation was obtained by using a new etching technology with the mixed gas of methane and hydrogen instead of neural or inert gas, and the damages caused by physical bombardment were much less because of the small quality of radical. The sample etched by using this technology was compared with the ones by using etching of neural or inert gas. The influences of ICP etching process parameters on etch rate, surface roughness and surface damage were investigated by using orthogonal experimental design. The methods of scanning electron microscopy (SEM) and X-ray Diffraction (XRD) were used to investigate the surface profile and surface damage respectively. And according to the experimental results, the process parameters are optimized. Finally, a feasible etching technology with low damage, good surface profile and good controllability was achieved.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84192H (15 October 2012); doi: 10.1117/12.976038
Show Author Affiliations
Bo Yang, Shanghai Institute of Technical Physics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Yaoming Zhu, Shanghai Institute of Technical Physics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Honghai Deng, Shanghai Institute of Technical Physics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Peng Wei, Shanghai Institute of Technical Physics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Hengjing Tang, Shanghai Institute of Technical Physics (China)
Tao Li, Shanghai Institute of Technical Physics (China)
Xue Li, Shanghai Institute of Technical Physics (China)
Haimei Gong, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

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