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Proceedings Paper

Analysis of dark current in long-wavelength HgCdTe junction diodes at low temperature and an approximate method to calculate the trap density of depletion region
Author(s): Hua Hua; Xiaohui Xie; Xiaoning Hu
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Paper Abstract

This paper analyzes the dark current characteristic of two different sizes at different temperature. The wavelength is 12 μm. We find that the main mechanism of the dark current is band-to-band tunnel current at 20 k-30 k. By fitting the ideal factor, we find that at temperature of 80 k-100 k, the dark current is a mixture of diffusion current, g-r current. We find the large size is better by comparing the R0A-V curves. At 45 k-60 k, the dark current is a mixture of trap-assisted tunnel current and band-to-band tunnel current. An interesting thing is that in this temperature area, the different R0-V curves have a same sharp cross which does not exist in the 20 k-30 k area or 80 k-100 k area. At this point the trap-assisted tunnel is equal to the band-to-band tunnel. We calculated the trap density of depletion region which is about 1.38×1011 cm-3 at 55 k.

Paper Details

Date Published: 15 October 2012
PDF: 5 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84191A (15 October 2012); doi: 10.1117/12.975948
Show Author Affiliations
Hua Hua, Shanghai Institute of Technical Physics (China)
Xiaohui Xie, Shanghai Institute of Technical Physics (China)
Xiaoning Hu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

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