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Proceedings Paper

Minority carrier lifetimes in different doped LWIR HgCdTe grown by LPE
Author(s): GuangYin Qiu; YanFeng Wei; QuanZhi Sun; JianRong Yang
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Paper Abstract

The carrier lifetimes of different types of p-type doped HgCdTe(x~0.23) long wavelength infrared (LWIR) epilayers were measured which were Hg-vacancy, Au and arsenic doped ones prepared by Te-rich Liquid-phase epitaxy (LPE). By comparing the lifetimes of Hg-vacancy and extrinsic doped HgCdTe, we focus on three primary mechanisms limiting the lifetimes in these different p-type HgCdTe samples: radiative recombination, Auger recombination and Schokley-Read- Hall (SRH) Recombination. The recombination mechanism in p-type HgCdTe is the SRH recombination at low temperatures and Auger and radiative recombination at high temperature. It is found that the lifetime of As-doped and Au-doped HgCdTe is far longer than that of Hg-vacancy-doped sample which is caused by the deep energy level of the Hg-vacancy acceptor that is considered as a recombination center in HgCdTe. Also we found lifetime in those p-type doped HgCdTe LWIR epilayers is limited by SRH by comparing the experimental lifetimes with the calculated data. Impurity doping was found to have a main effect on minority carrier lifetime.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84191J (15 October 2012); doi: 10.1117/12.975827
Show Author Affiliations
GuangYin Qiu, Shanghai Institute of Technical Physics (China)
YanFeng Wei, Shanghai Institute of Technical Physics (China)
QuanZhi Sun, Shanghai Institute of Technical Physics (China)
JianRong Yang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

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