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Proceedings Paper

Single crystalline InAsxSb1-x grown on (100) InSb substrate by liquid phase epitaxy
Author(s): Changhong Sun; Shuhong Hu; Qiwei Wang; Feng Qiu; Yingfei Lv; Huiyong Deng; Yan Sun; Ning Dai
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Paper Abstract

Single crystalline InAs0.016Sb0.984 film has been successfully grown on (100) InSb substrate by LPE method. A large supercooling (ΔT = 15 °C) had been used to prevent substrate from dissolving into the epilayer. High resolution X-ray diffraction (HRXRD) measurement was used to characterize the crystal quality of the film. Only (200) and (400) peaks were observed from the XRD spectrum, indicating that the film was single crystalline with (100) orientation. The Fourier transform infrared (FTIR) transmission spectrum of the film at room temperature revealed 7.77 μm cut-off wavelength of the film. The lattice dynamics of the epilayer was studied by Raman scattering, suggests two-mode behavior of the optical phonons.

Paper Details

Date Published: 15 October 2012
PDF: 5 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84191E (15 October 2012); doi: 10.1117/12.975813
Show Author Affiliations
Changhong Sun, Shanghai Institute of Technical Physics (China)
Shuhong Hu, Shanghai Institute of Technical Physics (China)
Qiwei Wang, Shanghai Institute of Technical Physics (China)
Feng Qiu, Shanghai Institute of Technical Physics (China)
Yingfei Lv, Shanghai Institute of Technical Physics (China)
Huiyong Deng, Shanghai Institute of Technical Physics (China)
Yan Sun, Shanghai Institute of Technical Physics (China)
Ning Dai, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

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