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Proceedings Paper

Mobility spectrum analysis of ion-etching-induced p-to-n type converted layers in HgCdTe single crystal
Author(s): Guoqing Xu; Xiangyang Liu; Kefeng Zhang; Hui Qiao; Jia Jia; Xiangyang Li
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Paper Abstract

In this paper, we study the magneto-transport properties of ion-etching-induced p-to-n type converted layers in Hg1- xCdxTe (x=0.24) single crystal with the help of mobility spectrum analysis (MSA) technique. Hall measurement shows that the residual p-HgCdTe completely converted to n-type after ion etching. By step-by-step chemical etching, MSA reveals that ion-etching-induced conversion results in a damaged surface layer with low electron mobility while a bulk n-type region exhibits higher electron mobility. It can be observed that the mobility of the surface electrons is independence of temperature in the measured temperature range. In contrast, the bulk electrons exhibit classical behavior of n-HgCdTe with characteristics that are strongly dependence on temperature. The Hall data from different thickness shows the bulk n-layer is uniform with high mobility and lower concentration.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 841912 (15 October 2012); doi: 10.1117/12.975806
Show Author Affiliations
Guoqing Xu, Shanghai Institute of Technical Physics (China)
Xiangyang Liu, Shanghai Institute of Technical Physics (China)
Kefeng Zhang, Shanghai Institute of Technical Physics (China)
Hui Qiao, Shanghai Institute of Technical Physics (China)
Jia Jia, Shanghai Institute of Technical Physics (China)
Xiangyang Li, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

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