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Proceedings Paper

Reactive Ion Etching Of Silicon Dioxide
Author(s): Peter C. Sukanek; Glynis Sullivan
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Paper Abstract

The etch rates of thermally grown and CVD-deposited silicon dioxide were studied in three different reactive ion etch reactors, parallel plate, hexode and single wafer. Carbon-fluorine chemistry was used, and each reactor operated at 13.56 MHz. Assuming the etch rate to be a linear function of the DC bias and using an empirical relationship between bias and the ratio of pressure to power, a good correlation for the rate in each reactor was obtained. In addition, it was found that by plotting a normalized etch rate against the pressure to power ratio, data from all three reactors, as well as other data reported in the literature, could be correlated by a single line for each oxide.

Paper Details

Date Published: 17 September 1987
PDF: 5 pages
Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); doi: 10.1117/12.975614
Show Author Affiliations
Peter C. Sukanek, Clarkson University (United States)
Glynis Sullivan, Clarkson University (United States)


Published in SPIE Proceedings Vol. 0811:
Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection
Harry L. Stover; Stefan Wittekoek, Editor(s)

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