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Proceedings Paper

Vitreous Chalcogenide Gesey Thin Films Obtained By Plasma Enhanced Chemical Vapor Deposition
Author(s): M. Ribes; B. Cros; P. Julien
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Paper Abstract

GeSe glass films have been deposited in a hot wall glow-discharge machine using germaneY(GeH4) hydrogen selenide (H2Se) and nitrogen as a carrier gas. Eighteen four inches wafers were processed simultaneously. To obtain the best results the parameters such as pressure, temperature, nature of carrier gas, gas flow, plasma power have been optimized.

Paper Details

Date Published: 17 September 1987
PDF: 4 pages
Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); doi: 10.1117/12.975613
Show Author Affiliations
M. Ribes, Laboratoire de Physico-chimie des Materiaux U.A. 407 C.N.R.S. (France)
B. Cros, Laboratoire de Physico-chimie des Materiaux U.A. 407 C.N.R.S. (France)
P. Julien, A.S.M. Sud-Europe (France)


Published in SPIE Proceedings Vol. 0811:
Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection
Harry L. Stover; Stefan Wittekoek, Editor(s)

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