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Proceedings Paper

Positive Near-UV Resist For Bilayer Lithography
Author(s): R. Sezi; R. Leuschner; c. Nolscher; D. Stephani
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Paper Abstract

A novel alkaline-soluble silicon-containing copolymer for use in bilayer lithography has been developed. This copolymer (CVPVS)consists of p-vinylphenol and vinyltrimethylsilane and was prepared in a two-step process: anionic polymerization of a p-alkoxystyrene with vinyltrimethylsilane followed by ether cleavage of the alkoxy group. The copo-lymer used for lithographic application has a number average molecular weight of 2700 and shows very good solubility in a variety of organic solvents. CVPVS has nearly no absorption above 300 nm and at 248 nm its absorption is six times lower than that of a commercially available poly(p-vinylphenol). The silicon-containing photoresist (SPR) prepared from this copolymer and a diazoquinone photosensitizer is completely compatible with current resist processing.

Paper Details

Date Published: 17 September 1987
PDF: 8 pages
Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); doi: 10.1117/12.975609
Show Author Affiliations
R. Sezi, Siemens AG (Germany)
R. Leuschner, Siemens AG (Germany)
c. Nolscher, D-8000 Munich (Germany)
D. Stephani, Siemens AG (Germany)

Published in SPIE Proceedings Vol. 0811:
Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection
Harry L. Stover; Stefan Wittekoek, Editor(s)

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