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Proceedings Paper

I-Line Wafer Stepper Technology For Gallium Arsenide Applications
Author(s): Michele Nuhn; Shi-Kay Yao; Brad Avrit
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Paper Abstract

The ASET i-line, 0.42 N.A. high resolution 10X stepper routinely achieves 0.5 micron lines/spaces over a planar surface and 0.6 micron lines/spaces over topography across the 13 mm diameter field. This paper reports the application of i-line technology to the production of Gallium Arsenide Integrated Circuits.

Paper Details

Date Published: 17 September 1987
PDF: 7 pages
Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); doi: 10.1117/12.975605
Show Author Affiliations
Michele Nuhn, American Semiconductor Equipment Technologies (United States)
Shi-Kay Yao, American Semiconductor Equipment Technologies (United States)
Brad Avrit, TriQuint Semiconductor (United States)


Published in SPIE Proceedings Vol. 0811:
Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection
Harry L. Stover; Stefan Wittekoek, Editor(s)

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