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Proceedings Paper

Submicron Optical Lithography With High Resolution I-Line Lens
Author(s): L. Sebastian; N. Lehner; F. Bieringer; W. Arden
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Paper Abstract

This paper reports about a submicron optical lithography based on the Zeiss i-line lens 10-78-48 which has a superior resolution due to a high numerical aperture of 0.42 and reduced wavelength of exposure. The first prototype of this lens has been incorporated into a GCA DSW-6300 waferstepper and was extensively used in a CMOS process with 0.8-μm-technology. Problems of this first application of i-line lithography are the main subject of this paper emphasizing the vanishing margin of depth of focus and the interference of i-line aerial image with standard g-line resists. A characterization of the lens performance is presented as well as a summary of our experiences with low absorbing photoresists which are better adapted to i-line exposure.

Paper Details

Date Published: 17 September 1987
PDF: 9 pages
Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); doi: 10.1117/12.975594
Show Author Affiliations
L. Sebastian, Siemens Microelectronic Technology Center (Germany)
N. Lehner, Siemens Microelectronic Technology Center (Germany)
F. Bieringer, Siemens Microelectronic Technology Center (Germany)
W. Arden, Siemens Microelectronic Technology Center (Germany)

Published in SPIE Proceedings Vol. 0811:
Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection
Harry L. Stover; Stefan Wittekoek, Editor(s)

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