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Proceedings Paper

Semiconductor Diode Laser Array Modeling
Author(s): D. L. Bullock; R. J. Wagner; Paul H. Corneil
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Paper Abstract

A semiconductor diode laser array model is applied to the case of the optimization of a twin channel laser (TCL) design. Results substantially in agreement with experiment are obtained as to optimum general geometry, active layer thickness, cladding layer thickness to either side of the coupled channels (wing region), and threshold current. Differential efficiency predictions are too high relative to experiment, probably due to leakage currents in the experimental device. A current-induced mode instability at high current is predicted.

Paper Details

Date Published: 25 November 1986
PDF: 7 pages
Proc. SPIE 0642, Modeling and Simulation of Optoelectronic Systems, (25 November 1986); doi: 10.1117/12.975483
Show Author Affiliations
D. L. Bullock, TRW (United States)
R. J. Wagner, TRW (United States)
Paul H. Corneil, TRW (United States)

Published in SPIE Proceedings Vol. 0642:
Modeling and Simulation of Optoelectronic Systems
John Dugan O'Keefe, Editor(s)

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