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Proceedings Paper

The interfacial properties of AOF/ZnS and LWIR bulk HgCdTe materials by MIS structures
Author(s): Nili Wang; Shijia Liu; Tianyi Lan; Shuiping Zhao; Peilu Jiang; Xiangyang Li
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Paper Abstract

The semiconductor-passivating layer interface, as well as the dielectric properties of the passivants, plays an important role in HgCdTe based photoelectric detectors. Anodization is a commonly uses surface passivation for HgCdTe. ZnS is deposited on the AOF (anodic-oxide film) as antireflecting layer. The interfacial properties of the metal insulator semiconductor (MIS) structures were determined by capacitance-voltage (C-V) measurements in the frequency range 10 KHz-10 MHz. The results showed that the MIS detector could not reach the high frequency level even at frequencies up to 10 MHz. The interfacial state densities were 3.4×1011 cm-2q-1V-1 and the fixed charges were 1.1×1012 cm-2. The surface recombination velocity was 700 cm/s.

Paper Details

Date Published: 15 October 2012
PDF: 5 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84191D (15 October 2012); doi: 10.1117/12.975117
Show Author Affiliations
Nili Wang, Shanghai Institute of Technical Physics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Shijia Liu, Shanghai Institute of Technical Physics (China)
Tianyi Lan, Shanghai Institute of Technical Physics (China)
Shuiping Zhao, Shanghai Institute of Technical Physics (China)
Peilu Jiang, Shanghai Institute of Technical Physics (China)
Xiangyang Li, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

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