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Proceedings Paper

Application of Au/Sn in the formation of p-HgCdTe photoconductive detectors' electrodes
Author(s): Yidan Tang; Jia Jia; Hui Qiao; Yan Zhang; Xiangyang Li
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Paper Abstract

The formation of devices' electrodes is one of the key techniques in the fabrication of HgCdTe infrared photoconductive detectors. To study the properties of devices using the structure of Au/Sn/p-HgCdTe, an experiment was made, and compared with the devices deposited Au/In on p-HgCdTe. By applying the Au/Sn on p-HgCdTe contact to photoconductive devices, the current-voltage characteristics of the devices were measured, and the results show that the metal contact is ohmic contact. The contact resistance of Au/Sn/p-HgCdTe devices was measured, being smaller than Au/In/p-HgCdTe devices, and both the response rate and signal of Au/Sn/p-HgCdTe devices were much bigger. A standard test method for measuring adhesion by tape was applied to measure the adhesion between Tin and HgCdTe, and the results show that the adhesion of Sn/HgCdTe is bigger than In/HgCdTe. Experimental results show that Tin contacts are suitable as low-resistance, low-noise, reliable and manufacturable ohmic contacts to p-type HgCdTe photoconductive devices.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84190Z (15 October 2012); doi: 10.1117/12.974977
Show Author Affiliations
Yidan Tang, Shanghai Institute of Technical Physics (China)
Jia Jia, Shanghai Institute of Technical Physics (China)
Hui Qiao, Shanghai Institute of Technical Physics (China)
Yan Zhang, Shanghai Institute of Technical Physics (China)
Xiangyang Li, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

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