Share Email Print
cover

Proceedings Paper

Preferential sputtering of Ar ion processing SiO2 mirror
Author(s): Guping Duan; Tingwen Xing; Yun Li
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In the optical processing, ion beam processing has been used widely for the advantages of highly-precision, less pollution and no stress and distortion. In order to analysis the preferential sputtering phenomenon, that Ar ion processing SiO2 mirror is considered as an example, which is commonly done in ion beam processing. In order to improve the processing precision, the influence of Ar ion incident angle and incident energy on SiO2 sputtering yield is analyzed in the case of considering the preferential sputtering phenomenon. By using the TRIM 2008 software, the sputtering situation of two elements of Si and O are simulated. The sputtering yield rate of the two elements is always a certain proportion, and the ratio is not related with the incident angle and it almost stays the same in a certain energy range. So, the SiO2 can be thought as a whole when considering its sputtering yield, which equals to the sum of Si and O sputtering yield.

Paper Details

Date Published: 16 October 2012
PDF: 8 pages
Proc. SPIE 8416, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 84162L (16 October 2012); doi: 10.1117/12.973697
Show Author Affiliations
Guping Duan, Institute of Optics and Electronics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Tingwen Xing, Institute of Optics and Electronics (China)
Yun Li, Institute of Optics and Electronics (China)


Published in SPIE Proceedings Vol. 8416:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; Eric Ruch; Shengyi Li, Editor(s)

© SPIE. Terms of Use
Back to Top