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Proceedings Paper

A monothically integrated dual-wavelength photodetector with a step-shaped Fabry-Pérot filter
Author(s): Xinye Fan; Yongqing Huang; Xiaomin Ren; Xiaofeng Duan; Fuquan Hu; Qi Wang; Shiwei Cai
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Paper Abstract

A novel long wavelength photodetector with dual-wavelength response has been designed and fabricated, which can be realized by a step-shaped Fabry-Perot (F-P) filter structure. By using low pressure metal organic chemical vapor deposition (LP-MOCVD), the step-shaped GaAs/AlGaAs distributed Bragg reflectors (DBR) and the InP PIN photodetector are grown on a GaAs substrate, and by employing a thin low temperature buffer layer, the high quality GaAs/InP heteroepitaxy is realized. The structure of the photodetector is optimized by theoretical simulation. This device has a dual-peak distance of 19nm (1558, 1577 nm). The peak quantum efficiency of 8.5% around 1558 nm and 8.6% around 1577 nm, the 3dB bandwidth of 16 GHz are simultaneously obtained.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84191S (15 October 2012); doi: 10.1117/12.973659
Show Author Affiliations
Xinye Fan, Beijing Univ. of Posts and Telecommunications (China)
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)
Xiaofeng Duan, Beijing Univ. of Posts and Telecommunications (China)
Fuquan Hu, Beijing Univ. of Posts and Telecommunications (China)
Qi Wang, Beijing Univ. of Posts and Telecommunications (China)
Shiwei Cai, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

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