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Proceedings Paper

LWIR (long wave infrared) and quantum dot research at the U.S. Army Research Laboratory (ARL)
Author(s): Parvez N. Uppal
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Paper Abstract

This paper reviews the work of several teams at ARL. In the quantum well arena we are developing bulk InAsSb material for LWIR detectors type for high performance focal plane array applications, so far we have observed that the minority carrier lifetimes in the type II SLS material have been short. Short lifetimes present a major barrier towards the realization of high performance focal plane arrays. This paper discusses photoluminescence observed in InAsSb materials and our observation that the bandgap bowing parameter is much bigger than earlier studies have shown, opening up the possibility that up to 12 micron wavelength cut-off can be achieved in InAsSb alloys. In the second section a summary of the work done by the III-V and IR device team is presented, the team is using quantum dots to enhance the efficiency of solar photovoltaic devices. We have discovered that doping the quantum dots is critical in enhancing the efficiency of the solar cells.

Paper Details

Date Published: 15 October 2012
PDF: 7 pages
Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, 851206 (15 October 2012); doi: 10.1117/12.972460
Show Author Affiliations
Parvez N. Uppal, U.S. Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 8512:
Infrared Sensors, Devices, and Applications II
Paul D. LeVan; Ashok K. Sood; Priyalal S. Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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