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Proceedings Paper

Design and analysis of InGaAs PIN photodetectors integrated on silicon-on-insulator racetrack resonators
Author(s): Fuquan Hu; Yongqing Huang; Xiaofeng Duan; Xinye Fan; Xiaomin Ren; Qi Wang; Xia Zhang; Xin Guo; Shiwei Cai
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Paper Abstract

The integration of optical functionalities on a chip has been a long standing goal in the optical community. The ability to integrate compound semiconductors onto foreign substrates can lead to superior or novel functionalities. In this paper we integrate InGaAs /InP photodetectors onto Silicon-on-Insulator (SOI) racetrack resonators. The racetrack resonators can be fabricated by utilizing electron beam lithography and inductively-coupled-plasma reactive ion etching (ICP-RIE) technique. The racetrack structure is used for wavelength selectivity and the straight waveguide sections are used to achieve a large value of the coupling coefficient with a bus waveguide. The transmission characteristic of the racetrack resonator with a multimode interference (MMI) coupler has been numerically simulated. The result shows that the free spectral range (FSR) is inversely proportional to the length of the racetrack resonator. The FSR decreases as the increase of the length of straight waveguide sections or the radius of rings. The generalized multimode transmission matrix of the MMI has been evaluated with beam-propagation method. It has been found that the resonance wavelength can be reasonably predicted. Finally, the equation of quantum efficiency of the device is derived. The calculated peak quantum efficiency of the designed photodetector can achieve about 90% at 1.5499 μ m.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84191T (15 October 2012); doi: 10.1117/12.971430
Show Author Affiliations
Fuquan Hu, Beijing Univ. of Posts and Telecommunications (China)
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)
Xiaofeng Duan, Beijing Univ. of Posts and Telecommunications (China)
Xinye Fan, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)
Qi Wang, Beijing Univ. of Posts and Telecommunications (China)
Xia Zhang, Beijing Univ. of Posts and Telecommunications (China)
Xin Guo, Beijing Univ. of Posts and Telecommunications (China)
Shiwei Cai, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

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