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Proceedings Paper

Stress evolution in evaporated HfO[sub]2[/sub]/SiO[sub]2[/sub] multilayers
Author(s): Jingping Li; Ming Fang; Hongbo He; Jianda Shao
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Paper Abstract

Hafnium oxide/silicon dioxide (HfO2/SiO2) multilayers were prepared by electron-beam evaporation. The total force per unit width (F/w) during and after deposition was determined by the change of the substrate curvature measured in situ. Stress induced by water absorption is a major component of the film stress evolution in atmospheric environment. Growth stress was analyzed to understand the role of the sublayers and the influence of the underlayers’ structural features. The substrate material affects the stress evolutions in both HfO2 films and SiO2 films. The structural feature of the HfO2 layer onto which SiO2 was deposited has a significant effect on the stress evolution of the SiO2 layer.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8417, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, 84173N (15 October 2012); doi: 10.1117/12.971422
Show Author Affiliations
Jingping Li, Shanghai Institute of Optics and Fine Mechanics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Ming Fang, Shanghai Institute of Optics and Fine Mechanics (China)
Hongbo He, Shanghai Institute of Optics and Fine Mechanics (China)
Jianda Shao, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 8417:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment
Yudong Zhang; Libin Xiang; Sandy To, Editor(s)

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