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Proceedings Paper

Study of exposure process of photoresist using phase-modulated ellipsometer
Author(s): Wende Liu; Chi Chen; Qiming Fan; Xi Chen; Chundi Zheng; Yu Wang
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Paper Abstract

The phase modulated ellipsometer (PME) was used to investigate the exposure procedure of S9912 photoresist film, and the optical constants as well as its changing process before/after the exposure and during the exposure process were obtained. The paper solved the measurement and analysis related methods when applying the PME, including choosing suitable optical filter to assist the ellipsometric test; measuring scheme optimization for specific wavelength range; combining dispersive-model-based nonlinear fit and point-by-point extreme value algorithm. The thickness change was also observed before/after the exposure and suitably utilized to analyze the optical constants. The influence of the instrumental sensivity on the results is also analyzed. The measurement and analytical method based on PME ellipsometry provided here could be useful for material-related and characterization-related research in the field of micro-nano optoelectronics.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8417, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, 84170I (15 October 2012); doi: 10.1117/12.970644
Show Author Affiliations
Wende Liu, National Institute of Metrology (China)
Chi Chen, National Institute of Metrology (China)
Qiming Fan, National Institute of Metrology (China)
Xi Chen, Institute of Semiconductors (China)
Chundi Zheng, National Institute of Metrology (China)
Yu Wang, National Institute of Metrology (China)


Published in SPIE Proceedings Vol. 8417:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment
Yudong Zhang; Libin Xiang; Sandy To, Editor(s)

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