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Proceedings Paper

Photoelectrochemical Corrosion of Semiconductors for Solar Cells
Author(s): M. J. Madou; K. W. Frese; S. R. Morrison
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Paper Abstract

Experimental results on stabilization against photo-induced corrosion of n-Si and n-GaAs in contact with electrolytes are given. Photocorrosion is examined on silicon using voltammetry on GaAs using a rotating ring-disk technique. The most extensive testing of stability was done for n-Si in a solution of N,N,N',N'-tetramethyl-p-phenvlenediamine in methanol and for n-GaAs in an aqueous solution of Fe(II) EDTA. Multiple waves were observed for the oxidation of several organic compounds on illuminated n-Si. To explain this auasi-metallic behavior a model based on an intervening thin surface oxide is postulated. In the case of n-GaAs the influence of mechanical surface damage, pH of the solution and redox couple used was studied. It is found that surface defects areativ enhance the susceptibility of the GaAs to photo-induced corrosion.

Paper Details

Date Published: 25 November 1980
PDF: 9 pages
Proc. SPIE 0248, Role of Electro-Optics in Photovoltaic Energy Conversion, (25 November 1980); doi: 10.1117/12.970590
Show Author Affiliations
M. J. Madou, SRI International (United States)
K. W. Frese, SRI International (United States)
S. R. Morrison, SRI International (United States)


Published in SPIE Proceedings Vol. 0248:
Role of Electro-Optics in Photovoltaic Energy Conversion
Satyendra K. Deb, Editor(s)

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