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Proceedings Paper

Effect of An Interfacial Oxide On Amorphous Si:F:H Alloy Based Metal Insulated Semiconductor (MIS) Devices
Author(s): A. Madan; J. McGill; S. R. Ovshinsky; W. Czubatyj; J. Yang; M. Shur
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Paper Abstract

We discuss the effect of oxides on the forward and reverse bias J-V characteristics in a-Si:F:H MIS type devices. Data are also presented for the variation of the open circuit voltage with the work function of the Schottky contact. We conclude that the density of interface states is low.

Paper Details

Date Published: 25 November 1980
PDF: 4 pages
Proc. SPIE 0248, Role of Electro-Optics in Photovoltaic Energy Conversion, (25 November 1980); doi: 10.1117/12.970582
Show Author Affiliations
A. Madan, Energy Conversion Devices, Inc. (United States)
J. McGill, Energy Conversion Devices, Inc. (United States)
S. R. Ovshinsky, Energy Conversion Devices, Inc. (United States)
W. Czubatyj, Energy Conversion Devices, Inc. (United States)
J. Yang, Energy Conversion Devices, Inc. (United States)
M. Shur, Energy Conversion Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 0248:
Role of Electro-Optics in Photovoltaic Energy Conversion
Satyendra K. Deb, Editor(s)

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