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Proceedings Paper

The accurate measurement of background carrier concentration in short-period longwave InAs/GaSb superlattices on GaSb substrate
Author(s): Zhicheng Xu; Jianxin Chen; Qingqing Xu; Yi Zhou; Chuan Jin; Fangfang Wang; Li He
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Paper Abstract

In the paper we report on a technology of removing the conducting GaSb substrate with the mechanical thinning and wet etch, and then the electrical measurement of non-intentionally doped long-wavelength Infrared (LWIR) type-II InAs/GaSb superlattices (SLs). The SL structures were made of periodic 15 InAs monolayers (MLs) and 7 GaSb MLs with cutoff wavelengths around 11 μm. A etch stop layer was grown between the GaSb substrate and SL for substrate removal for no chemical solution exists with enough selectivity between the GbSb and SLs during the wet etch process. After removing the GaSb substrate, the transport properties measurements of SLs are performed using temperature dependent from 20 k to 296 k and variable magnetic field Hall measurements. It is found that the LWIR SLs is n-type at the all temperatures. Meanwhile, from the result of the mobility spectrum analysis at 76 k, there are more than one type carrier conducting in the LWIR SLs material.

Paper Details

Date Published: 15 October 2012
PDF: 8 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84190S (15 October 2012); doi: 10.1117/12.970554
Show Author Affiliations
Zhicheng Xu, Shanghai Institute of Technical Physics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Jianxin Chen, Shanghai Institute of Technical Physics (China)
Qingqing Xu, Shanghai Institute of Technical Physics (China)
Yi Zhou, Shanghai Institute of Technical Physics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Chuan Jin, Shanghai Institute of Technical Physics (China)
Jinan Univ. (China)
Fangfang Wang, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

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