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Proceedings Paper

Silicon-on-insulator electro-optically tunable microring resonators with gear-shaped p-i-n diodes
Author(s): Wei Hong; Chuanxiang Sheng; Qian Chen
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Paper Abstract

In this paper, a novel electron node for microring is analyzed based on plasma dispersion modulation effect. The gearshaped double-sector electron node is designed for microring embedded with resonator disks (MERD). Silvaco, twodimensional (2-D) semiconductor device simulator, has been used to analyze the relationship between concentration changes of free hole (electron) and output voltage. The optical investigation was carried out by CMT tools, giving rise to a complete evaluation of the electro-optically properties for our device. We simulate three positions of the MERD cross section with two dopant concentrations. The results show that spacing between electron nodes has important impact to resonator frequency shift. Fixing the concentrations of P and N at 1e20/cm3, the resonator frequency shift can be reached to 0.09nm when the spacing between electron nodes is 2 µm.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 841911 (15 October 2012); doi: 10.1117/12.970538
Show Author Affiliations
Wei Hong, Nanjing Univ. of Science and Technology (China)
Chuanxiang Sheng, Nanjing Univ. of Science and Technology (China)
Qian Chen, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

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