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Proceedings Paper

Laser effects on the oscillator strength for the intraband transitions in CdS/SiO2 quantum dots
Author(s): Adrian Radu
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Paper Abstract

II-VI semiconductor nanostructures are particularly interesting due to their potential applications in novel optoelectronic devices. There have been many advances in the field, but relatively little work has been done on II-VI semiconductor low-dimensional systems under non-resonant laser radiation. Although the potential outcomes may be important for designing tunable optical devices, they involve complicated numerical techniques. Dealing with nano-scale problems frequently implies tricky mathematical issues as the non-analytical solutions. In this paper we investigate the effects of the laser field radiation on the electronic subband levels in cylindrical CdS/SiO2 quantum dots. Understanding the laser effects on the oscillator strength for the intraband transitions in CdS/SiO2 quantum dots may be relevant in the quantitative interpretation of the future experimental data related to this kind of structures. Our results prove that laser radiation could be used for tuning the quantum dots optical absorption/emission.

Paper Details

Date Published: 1 November 2012
PDF: 8 pages
Proc. SPIE 8411, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI, 841123 (1 November 2012); doi: 10.1117/12.970485
Show Author Affiliations
Adrian Radu, Politehnica Univ. of Bucharest (Romania)


Published in SPIE Proceedings Vol. 8411:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI
Paul Schiopu; Razvan Tamas, Editor(s)

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