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Proceedings Paper

Graded nanowire ultraviolet LEDs by polarization engineering
Author(s): Santino D. Carnevale; Thomas F. Kent; Patrick J. Phillips; A.T.M. Golam Sarwar; Robert F. Klie; Siddharth Rajan; Roberto C. Myers
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Paper Abstract

Given the large thermal activation energy of acceptors in high %Al AlGaN, a new approach is needed to control p-type conductivity in this material. One promising alternative to using impurity doping with thermal activation is using the intrinsic characteristics of the III-nitrides to activate dopants with polarization-induced charge in graded heterostructures. In this work polarization-induced activation of dopants is used in graded AlGaN nanowires grown by plasma-assisted molecular beam epitaxy to form ultraviolet light-emitting diodes. Electrical and optical characterization is provided, showing clear diode behavior and electroluminescent emission at 336nm. Variable temperature electrical measurements show little change in device performance at cryogenic temperatures, proving that dopant ionization is polarizationinduced rather than thermally activated.

Paper Details

Date Published: 11 October 2012
PDF: 11 pages
Proc. SPIE 8467, Nanoepitaxy: Materials and Devices IV, 84670L (11 October 2012); doi: 10.1117/12.970450
Show Author Affiliations
Santino D. Carnevale, The Ohio State Univ. (United States)
Thomas F. Kent, The Ohio State Univ. (United States)
Patrick J. Phillips, Univ. of Illinois at Chicago (United States)
A.T.M. Golam Sarwar, The Ohio State Univ. (United States)
Robert F. Klie, Univ. of Illinois at Chicago (United States)
Siddharth Rajan, The Ohio State Univ. (United States)
Roberto C. Myers, The Ohio State Univ. (United States)

Published in SPIE Proceedings Vol. 8467:
Nanoepitaxy: Materials and Devices IV
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam, Editor(s)

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