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Proceedings Paper

Silicon [i]pin[/i] diodes for remote sensing
Author(s): Ernest Robinson; Arvind D'Souza; Phil Ely; Craig Yoneyama
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Paper Abstract

Silicon photon detectors and focal plane arrays (FPAs) are fabricated in many varieties1,2. Their function depends on the detector architecture, dopants, and operating temperature. DRS has fabricated silicon pin detectors that cover the visible spectral range and blocked impurity band (BIB) detectors that cover the very-long-wavelength infrared (VLWIR) region3. Imaging arrays of silicon pin-diodes utilize the intrinsic bandgap of silicon to provide high photo response over the 0.4 – 1.0 μm spectral range. The detectors operate at or near room temperature as required. Silicon pin-diode arrays are particularly attractive as an alternative to charge-coupled devices (CCDs) for space applications where radiation hardening is needed. Pros and cons of CCD and pin diode architectures are listed in Reference4.

Paper Details

Date Published: 15 October 2012
PDF: 9 pages
Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, 85120Q (15 October 2012); doi: 10.1117/12.970311
Show Author Affiliations
Ernest Robinson, DRS Sensors & Targeting Systems, Inc. (United States)
Arvind D'Souza, DRS Sensors & Targeting Systems, Inc. (United States)
Phil Ely, DRS Sensors & Targeting Systems, Inc. (United States)
Craig Yoneyama, DRS Sensors & Targeting Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 8512:
Infrared Sensors, Devices, and Applications II
Paul D. LeVan; Ashok K. Sood; Priyalal S. Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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