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Proceedings Paper

Reading And Writing Of Photochemical Holes Using GaAlAs Diode Lasers
Author(s): P. Pokrowsky; W. E. Moerner; F. Chu; G. C. Bjorklund
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Paper Abstract

Photochemical holes are burnt and detected in the inhomogeneously broadened 833 nm zero phonon line of the R' color center in LiF using current tuned GaAlAs diode lasers.

Paper Details

Date Published: 1 January 1983
PDF: 6 pages
Proc. SPIE 0382, Optical Data Storage, (1 January 1983); doi: 10.1117/12.970202
Show Author Affiliations
P. Pokrowsky, IBM Research Laboratory (United States)
W. E. Moerner, IBM Research Laboratory (United States)
F. Chu, IBM Research Laboratory (United States)
G. C. Bjorklund, IBM Research Laboratory (United States)

Published in SPIE Proceedings Vol. 0382:
Optical Data Storage
Di Chen, Editor(s)

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