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Proceedings Paper

Two-Regime Ablative Hole Formation Process In Tellurium And Tellurium-Alloy Films
Author(s): M. Chen; V. Marrello; U. G. Gerber
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Paper Abstract

Based on static laser writing data, we show that the writing characteristics of Te and Te-alloy films, which have a variety of crystalline structures and void densities, can be well explained by combining a two-regime hole opening model with the well known reversible (crystalline to amorphous transition) writing process.

Paper Details

Date Published: 1 January 1983
PDF: 6 pages
Proc. SPIE 0382, Optical Data Storage, (1 January 1983); doi: 10.1117/12.970197
Show Author Affiliations
M. Chen, IBM Research Laboratory (United States)
V. Marrello, IBM Research Laboratory (United States)
U. G. Gerber, IBM Research Laboratory (United States)

Published in SPIE Proceedings Vol. 0382:
Optical Data Storage
Di Chen, Editor(s)

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