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Proceedings Paper

Accurate Determination Of The Spin-Orbit Splitting Of The Valence Bands Of Silicon By Means Of Fourier Transform Photothermal Ionization Spectroscopy (FT-PTIS)
Author(s): S. C. Shen; Zhiyi Yu; Y. X. Huang
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Paper Abstract

By use of the FT-PTIS technique, the transitions from the ground state of boron to its excited states associated with the p3/2 valence band as well as to those associated with the p1/2 valence band have been observed for ultrapure silicon. According to the positions of 2p', 3p' and 4p' lines, and considering the nonparabolicity of the P1/2 band, the ionization energy of boron to the p1/2 band was deduced as EI(boron) = 88.45± 0.01 meV with high accuracy and without doping broadening of the line width. From the ionization energy of boron to the P3/2 band determined as E1(boron) = 45.83 ± 0.01 meV, the spin-orbit splitting of the valence bands in silicon has been determined to be Δo(Si) = 42.62 ± 0.01 meV, which seems to be the most accurate one so far.

Paper Details

Date Published: 1 December 1989
PDF: 3 pages
Proc. SPIE 1145, 7th Intl Conf on Fourier Transform Spectroscopy, (1 December 1989); doi: 10.1117/12.969558
Show Author Affiliations
S. C. Shen, Shanghai Institute of Technical Physics (China)
Zhiyi Yu, Shanghai Institute of Technical Physics (China)
Y. X. Huang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 1145:
7th Intl Conf on Fourier Transform Spectroscopy

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