Share Email Print

Proceedings Paper

Fourier Transform Infrared (FTIR) Determination Of Interstitial Oxygen Concentration Of Single-Side-Polished Silicon Wafers
Author(s): Brian Rennex
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

This paper evaluates a new algorithm developed by the author for calculating interstitial oxygen concentration in silicon wafers, using infrared transmission data. These silicon wafers have an unpolished side and are referred to as being single-side-polished (SSP). This evaluation is carried out for various "unpolished" surface types, which are representative of etched or backside-damaged surfaces used by the integrated circuit industry. In general, accurate measurement of oxygen content is necessary for improvement of quality control in the manufacture of integrated circuits, and this quality control is more reliable and less costly if this measurement can be done on SSP wafers.

Paper Details

Date Published: 1 December 1989
PDF: 3 pages
Proc. SPIE 1145, 7th Intl Conf on Fourier Transform Spectroscopy, (1 December 1989); doi: 10.1117/12.969486
Show Author Affiliations
Brian Rennex, National Institute of Standards and Technology (United States)

Published in SPIE Proceedings Vol. 1145:
7th Intl Conf on Fourier Transform Spectroscopy
David G. Cameron, Editor(s)

© SPIE. Terms of Use
Back to Top