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Proceedings Paper

Laser-Induced Formation Of SiO2-Layers For Microelectronics
Author(s): H. Sigmund
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Paper Abstract

After a short overview about the different techniques of the Si02-formation by photo-induced methods used in microelectronics, the laser-induced deposition of Si02-layers on silicon wafers from TEOS by ArF excimer laser are depicted in more detail and the deposition conditions are outlined in dependence of substrate temperature, partial pressure and laser fluences. The physical properties of the Si02-layers were investigated by FT-IR spectroscopy and ellipsometry; the electrical properties of CV-characteristic, mobile ion density, interface state density and breakdown voltage are given.

Paper Details

Date Published: 16 January 1988
Proc. SPIE 0952, Laser Technologies in Industry, (16 January 1988); doi: 10.1117/12.968909
Show Author Affiliations
H. Sigmund, Institut fur Festkorpertechnologie (Germany)

Published in SPIE Proceedings Vol. 0952:
Laser Technologies in Industry
Silverio P. Almeida; Luis Miguel Bernardo; Oliverio D.D. Soares, Editor(s)

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