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Proceedings Paper

Recent Results In The Application Of Electron Beam Direct-Write Lithography
Author(s): Anthony Gonzales; Jorge Freyer; Samuel S. M. Fok
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Paper Abstract

The Perkin-Elmer AEBLE 150 e-beam lithography tool for direct writing on wafers has been installed in several different manufacturing environments. These include prototyping of silicon DRAMs, device development, GaAs production, high-resolution advance device, and full custom ASICs. This paper describes the application of Perkin-Elmer's AEBLE 150 from a large geometry ASIC high wafer throughput requirement, which includes personalization of metal and via layers, to the sub-0.2 μm high-resolution GaAs device. Electron beam personalization of metal and via layers for ASIC devices is advantageous for several reasons: 1) The versatility of the AEBLE 150 allows efficient mixing with optical lithography product lines. 2) The intrinsic machine overlay capability (0.15 μm) has been approached by the observed 0.25 μm overlays with wafers taken from product lots not originally designed for mixing of lithography tools. 3) This maskless technique provides cost savings for small lots where relatively few devices are required. 4) Commercially available resists have been used with good process and throughput performance for devices with 1 μm minimum spaces. For GaAs applications, resolution of 0.25μm or better is required to produce GHz devices. The resolution limit of the AEBLE 150 was investigated with the result that 0.15 μm gates are reliably produced in 0.5 μm thick PMMA over GaAs substrates.

Paper Details

Date Published: 1 August 1989
PDF: 12 pages
Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968546
Show Author Affiliations
Anthony Gonzales, Motorola Inc. (United States)
Jorge Freyer, The Perkin-Elmer Corporation (United States)
Samuel S. M. Fok, The Perkin-Elmer Corporation (United States)


Published in SPIE Proceedings Vol. 1089:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII
Arnold W. Yanof, Editor(s)

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