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Proceedings Paper

Influence Of The Structure And Functionality Of Photoactive Compounds On The Performance Of Novolak Based E-Beam Resists
Author(s): T. V. Jayaraman; S. Tadros; B. Beauchemin; A. J. Blakeney; N. N. Greene
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Paper Abstract

Photoactive compounds were prepared from 2,3,4-trihydroxy-, 2,3,4,4'-tetrahydroxy- and 2,3,4,3',4',5'-hexahydroxybenzophenone by esterification with diazonaphthoquinone-4 (or 5)-sulfonyl chlorides at several relative concentration ratios. These photoactive compounds were formulated into resists with a conventional cresol novolak resin. The percent diazonaphthoquinone moieties destroyed by exposure was determined by FTIR spectroscopy as a function of dose. The resist development rates were measured on a Development Rate Monitor (DRM) as a function of the electron beam or optical exposure dose. The relation between percent diazonaphthoquinone (DNQ) moieties remaining and the development rate is shown for two resists for both optical and electron beam exposures. The electron beam sensitivity for these resists were investigated to determine the effect of the number of hydroxyl groups in the backbone and the esterification level with diazonaphthoquinone-4-sulfonyl chloride. The lithographic performance of several similar 4- and 5-sulfonate diazonaphthoquinone esters were compared.

Paper Details

Date Published: 1 August 1989
PDF: 11 pages
Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968540
Show Author Affiliations
T. V. Jayaraman, Olin Hunt Specialty Products Inc. (United States)
S. Tadros, Olin Hunt Specialty Products Inc. (United States)
B. Beauchemin, Olin Hunt Specialty Products Inc. (United States)
A. J. Blakeney, Olin Hunt Specialty Products Inc. (United States)
N. N. Greene, Olin Hunt Specialty Products Inc. (United States)


Published in SPIE Proceedings Vol. 1089:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII
Arnold W. Yanof, Editor(s)

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