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Proceedings Paper

E-Beam Application Of Highly Sensitive Positive And Negative-Tone Resists For X-Ray Mask Making
Author(s): Siegfried Pongratz; Rita Demmeler; Christian Ehrlich; Klaus Kohlmann; Klaus Reimer; Ralph Dammel; Wolfgang Hessemer; Jurgen Lingnau; Ude Scheunemann; Jurgen Theis
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Paper Abstract

Resist sensitivity is one of the limiting factors in X-ray as well as e-beam lithography. To overcome the rather low sensitivities of commonly used resists like PMMA, a positive-tone X-ray resist ("RAY-PF") has been recently developed, which makes use of the concept of "chemical amplification". Since a novolak is included as a binder matrix, development can be performed by aqueous alkaline solutions, e.g. RAZ-Developer. Replacement of the dissolution inhibitor in RAY-PF by a chemical crosslinker yields a negative-tone resist ("RAY-PN") with very similar processing. The present investigation refers to the application of both resist types, originally designed to meet the demands of X-ray lithography, to high resolution e-beam lithography as applied for X-ray mask fabrication.

Paper Details

Date Published: 1 August 1989
PDF: 15 pages
Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968538
Show Author Affiliations
Siegfried Pongratz, Fraunhofer-Institut fur Mikrostrukturtechnik (Germany)
Rita Demmeler, Fraunhofer-Institut fur Mikrostrukturtechnik (Germany)
Christian Ehrlich, Fraunhofer-Institut fur Mikrostrukturtechnik (Germany)
Klaus Kohlmann, Fraunhofer-Institut fur Mikrostrukturtechnik (Germany)
Klaus Reimer, Fraunhofer-Institut fur Mikrostrukturtechnik (Germany)
Ralph Dammel, Hoechst AG (Germany)
Wolfgang Hessemer, Hoechst AG (Germany)
Jurgen Lingnau, Hoechst AG (Germany)
Ude Scheunemann, Hoechst AG (Germany)
Jurgen Theis, Hoechst AG (Germany)


Published in SPIE Proceedings Vol. 1089:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII
Arnold W. Yanof, Editor(s)

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