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Proceedings Paper

A High Throughput Electron Lithography System Using A Field Emission Gun
Author(s): W. B. Thompson; Y. Nakagawa; M. Hassel Shearer; H. Nakazawa; H. Takemura; M. Isobe; N. Goto
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Paper Abstract

Production quantities of GaAs FET's and MMIC's are now in demand for satellite communications and defense applications. These devices often require gate lengths below 0.25 microns. Recently production and pilot production of MMIC's and FET'S with sub-100nm gates has started. In order to satisfy the requirements of these new technologies JEOL developed a high throughput submicron and nanometric lithography system based on a field emission electron gun. This system provides stable performance with electron probe current densities in excess of 1000 A/cm2 while simultaneously providing stitching and overlay accuracies better than 0.05μm(3σ) with a minimum pattern width of 15nm. We will discuss the system and performance characteristics of this machine and present results from a recent installation.

Paper Details

Date Published: 1 August 1989
PDF: 8 pages
Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968534
Show Author Affiliations
W. B. Thompson, JEOL/USA (United States)
Y. Nakagawa, JEOL/USA (United States)
M. Hassel Shearer, JEOL/USA (United States)
H. Nakazawa, JEOL Ltd. (Japan)
H. Takemura, JEOL Ltd. (Japan)
M. Isobe, JEOL Ltd. (Japan)
N. Goto, JEOL Ltd. (Japan)


Published in SPIE Proceedings Vol. 1089:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII
Arnold W. Yanof, Editor(s)

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