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Proceedings Paper

X-Ray Exposure System With Plasma Source For Microlithography
Author(s): M. Taniguchi; R. Funatsu; A. Inagaki; K. Okamoto; Y. Kenbo; Y. Kato; I. Ochiai
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Paper Abstract

An x-ray exposure system with a plasma source has been developed to be applied in R & D of a deep-submicron device fabrication process. This system features high accuracy align-ment using imaging optics with high-speed signal processing, precision proximity gap control by means of a wafer surface flattening mechanism, and fine pattern replication by incorporating a plasma focus soft x-ray source. The imaging optics are arranged to be diagonally symmetric with respect to the x-ray exposure axis to perform continuous pattern detection (lateral displacement and gap) directly in an exposure field. A unique wafer chuck capable of flattening a wafer surface to within ±0.5 μm by piezoelectric actuators, supported by a six-axis, micro-motion mechanism, makes it possible to align the wafer to the mask (resolution of 0.01 μm) with a uniform gap (15=11 μm). The plasma focus source which emits x-rays with wavelengths in the range of 10 ~ 14 Å from high-temperature neon plasma using the pinch effect induced by a pulse current, has been newly developed. The pattern replication performance is thoroughly examined, showing an alignment accuracy of within ±0.1 μm (2σ), and a fine pattern replication of 0.3 μm.

Paper Details

Date Published: 1 August 1989
PDF: 12 pages
Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968532
Show Author Affiliations
M. Taniguchi, Hitachi Ltd. (Japan)
R. Funatsu, Hitachi Ltd. (Japan)
A. Inagaki, Hitachi Ltd. (Japan)
K. Okamoto, Hitachi Ltd. (Japan)
Y. Kenbo, Hitachi Ltd. (Japan)
Y. Kato, Hitachi Ltd. (Japan)
I. Ochiai, Hitachi Ltd. (Japan)


Published in SPIE Proceedings Vol. 1089:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII
Arnold W. Yanof, Editor(s)

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