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Proceedings Paper

Fabrication of 0.5 µm MOS Test Devices by Application of X-ray Lithography at All Levels
Author(s): Detlef Friedrich; Helmut Bernt; Hans L. Huber; Wolfgang Windbracke; Gerfried Zwicker
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Paper Abstract

Functioning 0.5 µm N-MOS test devices have been fabricated by means of X-ray lithography at all four levels. All exposures were carried out with synchrotron radiation of the BESSY storage ring in Berlin. This paper describes the performance of X-ray exposure and the resist system with regard to mask pattern placement accuracy, overlay and linewidth control. A total overlay of about 130 nm (1σ) in x and y direction and overall linewidth variation of 23 nm (1σ) within a 4 inch wafer on etched poly-Si structures have been achieved. Electrical results of 0.5 μm N-MOS transistors with long channel behaviour up to 3.5 V supply voltage will be shown.

Paper Details

Date Published: 1 August 1989
PDF: 8 pages
Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968528
Show Author Affiliations
Detlef Friedrich, Fraunhofer-Institut fur Mikrostrukturtechnik (IMT) (Germany)
Helmut Bernt, Fraunhofer-Institut fur Mikrostrukturtechnik (IMT) (Germany)
Hans L. Huber, Fraunhofer-Institut fur Mikrostrukturtechnik (IMT) (Germany)
Wolfgang Windbracke, Fraunhofer-Institut fur Mikrostrukturtechnik (IMT) (Germany)
Gerfried Zwicker, Fraunhofer-Institut fur Mikrostrukturtechnik (IMT) (Germany)

Published in SPIE Proceedings Vol. 1089:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII
Arnold W. Yanof, Editor(s)

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