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Proceedings Paper

SOR Lithography in West Germany
Author(s): A. Heuberger
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Paper Abstract

The 64 Mbit DRAM will represent the first generation of integrated circuits which cannot be produced reasonably by means of optical lithography techniques. X-ray lithography using synchrotron radiation seems to be the most promising method in overcoming the problems in the sub-0.5 micron range. The first year of production of the 64 Mbit DRAM will be 1995 or 1996. This means that X-ray lithography has to show its applicability in an industrial environment by 1992 and has to prove that the specifications of a 64 Mbit DRAM technology can actually be achieved. Part of this task is a demonstration of production suitable equipment such as the X-ray stepper, including an appropriate X-ray source and measurement and inspection tools. The most important bottlenecks on the way toward reaching these goals are linked to the 1 x scale mask technology, especially the pattern definition accuracy and zero level of printing defects down to the order of magnitude of 50 nm. Specifically, fast defect detection methods on the basis of high resolution e-beam techniques and repair methods have to be developed. The other problems of X-ray lithography, such as high quality single layer X-ray resists, X-ray sources and stepper including alignment are either well on the way or are already solved.

Paper Details

Date Published: 1 August 1989
PDF: 19 pages
Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968523
Show Author Affiliations
A. Heuberger, Fraunhofer-Institut far Mikrostrukturtechnik (IMT) (Germany)


Published in SPIE Proceedings Vol. 1089:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII
Arnold W. Yanof, Editor(s)

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