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Proceedings Paper

FIB-Assisted Cl2 Gas Etching of GaAs
Author(s): Y. Sugimoto; M. Taneya; H. Hidaka; K. Akita; H. Sawaragi; H. Kasahara; R. Aihara
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Paper Abstract

The FIB-assisted Cl2 etching of GaAs were studied by using 10 keV and 5 keV Ga+ ions. The etching yield, which is defined as the number of GaAs molecules etched by one Ga+ ion, was about 20 time as large as the sputtering yield without C12 molecules for both 10 keV and 5 keV ions. The PL intensity of the etched sample with 10 keV and 5 keV ions were 1/30~1/40 and ~1/10, respectively, compared to the initial value. From these results, it is concluded that the use of Ga+ ions with lower energy is effective to reduce the damage induced in GaAs processed by Ga+ FIB assisted C12 etching.

Paper Details

Date Published: 1 August 1989
PDF: 12 pages
Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968514
Show Author Affiliations
Y. Sugimoto, Ontoelectronics Technology Research Laboratory (Japan)
M. Taneya, Optoelectronics Technology Research Laboratory (Japan)
H. Hidaka, Optoelectronics Technology Research Laboratory (Japan)
K. Akita, Optoelectronics Technology Research Laboratory (Japan)
H. Sawaragi, JEOL Ltd. (Japan)
H. Kasahara, JEOL Ltd. (Japan)
R. Aihara, JEOL Ltd. (Japan)


Published in SPIE Proceedings Vol. 1089:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII
Arnold W. Yanof, Editor(s)

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