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Proceedings Paper

Focused-Ion-Beam Induced Deposition Of Metal For Microcircuit Modification
Author(s): D. K. Stewart; L. A. Stern; J. C. Morgan
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Paper Abstract

Focused-ion-beam (FIB) machines can now modify integrated circuits by milling disconnects as well as depositing conductive connections on both inter- and intra-level structures with a range of beam sizes. Although FIB sputtering is well developed for photomask and IC repair, FIB deposition of metal has only recently been used to repair actual devices. We have developed a process to deposit films with resistivities of 150 - 220 uohm-cm and at rates of 1 - 2 [angstroms-um2]/[pA-s]. This paper includes a description of FIB induced deposition of tungsten as well as applications which demonstrate the ability of the system to restructure microcircuits for repair and failure analysis.

Paper Details

Date Published: 1 August 1989
PDF: 8 pages
Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968510
Show Author Affiliations
D. K. Stewart, Micrion Corporation (United States)
L. A. Stern, Micrion Corporation (United States)
J. C. Morgan, Micrion Corporation (United States)

Published in SPIE Proceedings Vol. 1089:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII
Arnold W. Yanof, Editor(s)

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