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Proceedings Paper

Analysis Of A Submicron I-Line Pilot Process
Author(s): Atul Goel
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Paper Abstract

For the last several years controversy has centered around a successor to optical g-line step and repeat lithography. Diverse proponents have variously advanced e-beam, x-ray, ion beam, excimer, and optical exposure tools. At the same time several alternative resist schemes have been proposed. Multilayer, contrast enhancement, inorganic, and image reversal resists are some of the candidates. This paper presents the analysis of the selection and development of a lithography unit process designed to satisfy the needs of a high performance multilevel interconnect CMOS process at Hewlett Packard Corporation. This effort represents a unique opportunity because HP recognized the need to determine the capabilities of viable lithography technologies before embarking on a definition of the other parts of the VLSI process.

Paper Details

Date Published: 1 January 1988
PDF: 9 pages
Proc. SPIE 0922, Optical/Laser Microlithography, (1 January 1988); doi: 10.1117/12.968433
Show Author Affiliations
Atul Goel, Hewlett-Packard Corporation (United States)

Published in SPIE Proceedings Vol. 0922:
Optical/Laser Microlithography
Burn Jeng Lin, Editor(s)

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