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Proceedings Paper

Submicron Imaging Capabilities Of A 0.40 na Broadband Optical System
Author(s): H. M. Nishimoto; E. Tai; R. J. Naber; J. F. Chen; A. Nalamwar
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Paper Abstract

The submicron resolution capabilities, depth of focus, critical dimension control, and process latitude of a 1:1 0.40 NA lens using some of the newer high contrast resists were studied. Over the 3.5 cm2 field size the lens resolved 0.6 microns with a 0.8 to 1.6μ depth of focus. The depth of focus for 0.7μ features was found to range between 1.6 to 2.0μ. Resolution of 0.5μ with a 1.0μ depth of focus was achieved over a limited field size. The critical dimension measurements show that through focus 98% of the data stays within ±10% of the measured feature size. This critical dimension control and the improvement in resolution to 0.6 microns across the field indicates that the practical resolution of the lens can be better predicted by using 0.7 λ/NA. The application of this lower practical linewidth size to space-bandwidth-product was demonstrated.

Paper Details

Date Published: 1 January 1988
PDF: 9 pages
Proc. SPIE 0922, Optical/Laser Microlithography, (1 January 1988); doi: 10.1117/12.968428
Show Author Affiliations
H. M. Nishimoto, Ultratech Stepper (United States)
E. Tai, Ultratech Stepper (United States)
R. J. Naber, Ultratech Stepper (United States)
J. F. Chen, Performance Semiconductor, Inc (United States)
A. Nalamwar, Performance Semiconductor, Inc (United States)


Published in SPIE Proceedings Vol. 0922:
Optical/Laser Microlithography
Burn Jeng Lin, Editor(s)

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